Sprzęt laboratoryjny

Kompleksowe wyposażenie laboratorium

Materiały Optyczne i Optomechaniczne

Filtry, Lasery, Pryzmaty, Soczewki, Stoły Optyczne

Podłoża półprzewodnikowe

GaAs, GaSb, InP, InSb, InAs
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Kategorie produktów

Podłoża > Wafle GaAs (Gallium Arsenide)

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MECHANICAL SPECIFICATIONS

Gallium Arsenide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability.


ORIENTATION SPECIFICATIONS

Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. Higher index substrates of the type (n,1,1) where n = 1,2,3,4,5,6 etc and orientations such as (110) are also available. We also offer wafers with cut and/or cleaved flats.


SURFACE SPECIFICATIONS

All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry.


PACKAGING

Polished Wafers

coin-style tray, individually sealed in two outer bags in inert atmosphere. Cassette shipments are available on request).



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